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Benefits of Introducing the E-Beam Direct-Write Model
The current challenges in IC device development are reduction of development costs and shortening of development TAT (Turn Around Time). Focusing on these benefits, we examine in detail why it makes sense to introduce an E-Beam direct-write model now.
Benefits Offered by EBDW (Electron Beam Direct Writing) Technology
Since E-Beam direct-write model has the distinction of not requiring masks, more than one pattern can be written on a wafer as long as exposure data is available. The benefits are therefore clear: mask costs are zero, the number of prototype lots can be reduced, and the design period can be shortened. The following lists the advantages of introducing the E-Beam direct-write model.

1)

Supports microminiature devices

The F3000 supports system LSI production down to the 65nm rule.

2)

Effective in reducing costs and time for LSI development

Even a conventional EB direct-write model that writes with one beam can help relieve the burden of IC device development costs and shorten IC device development TAT. This benefit is important for the early marketing of distinctive devices.


Reducing the Development Costs

Supporting Short Time Delivery to Market

3)

Flexible enough to keep up with changes in system LSI production methods

EBDW equipment offers lower throughput than optical lithography equipment, but at current system LSI lifetime production quantities of 10,000~99,999 units, EBDW models deliver better COO than ArF models, making them the cost-saving choice. Looking ahead, multibeam technology is expected to improve throughput.


Best Solution for Small-Lot-Multiple-Type Production Lines
Application Example
e-Shuttle, Inc.
The F3000 enables e-Shuttle to offer a maskless EB direct-write LSI prototyping service, reducing costs and TAT, in addition to its low-cost shuttle service that mix-loads multiple device types and / or devices for multiple customers on a single photomask.
Application Example1 Application Example2
Since 2008, e-Shuttle has utilized the F3000 to prototype hundreds of advanced logic devices at the 90nm and 65nm nodes.
Phote Courtesy of e-Shuttle, Inc.
http://www.e-shuttle.co.jp/index_e.html
Technology Introduction
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