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Terahertz Spectroscopic / Imaging Analysis System
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Electronic Measuring Instruments
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About E-Beam Direct-Write Technology
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A Quick Introduction to EB Lithography Systems |
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The newest semiconductor circuits measure just 65 nanometers across. With these tiny 65-nm nodes now in production, and the miniaturization trend unabated, many manufacturers are now turning to EB lithography equipment to etch the wiring layer and critical layers such as gates and contact holes.
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Partial Batch Exposure |
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Advantest's EBDW lithography systems use a partial batch (one high-acceleration electron beam) exposure method. Other direct-writing methods include low-acceleration models, in which a more slowly accelerating voltage is applied to electron beams, and multibeam models, which use more than one beam to increase processing capacity.
A look at the history of EBDW shows us that the electron beam was a point (point source) until the mid-1970s. Around 1980, it became a variable rectangle, and around 1995, the partial batching method was developed using the variable rectangle beam.
In a variable rectangle system, the vertical and horizontal sizes can be changed at up to 5 micro-m square according to the exposure data. If, as often is the case these days, the rectangular size used in the pattern is 0.1 micro-m or less, only about one-fiftieth at most of the original capability can be used.
To make efficient use of its capability, the partial batch exposure system was devised. In this system, a repeatable pattern up to 5 micro-m square is provided as an aperture for pass-through, and such imaging is applied in one shot. This system makes the most of the original writing capability, and is based on the same concept as stamping that we use in everyday life. The portion that cannot be made into a stamp is applied as before with a variable rectangle beam.
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