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F5112 E-Beam Lithography System
Single-Column System Offers an Economical Solution for 0.13-Micron and Below Design Rules
The F5112 uses an electron optical column equivalent to the one adopted in Advantest's previous F5121 twin-column system. In addition to high current, this column also incorporates a high-speed e-beam deflection system. These features combine with the F5112's block exposure method-which significantly decreases the number of necessary exposure shots-to make it possible to achieve high throughput on a single-column system. Furthermore, to ensure high reliability and utilization, the F5112 offers a monitoring/feedback system for the exposure sequence and uses in situ cleaning of the electron optical column to maintain the stability of the e-beam.


Perfect for ASIC engineering samples, ASIC customer samples, and ASIC wiring.


Inherits the high precision and accuracy offered by the F5121.


Superior tool for R&D applications.
  F5112
Minimum Feature Size: 100nm
CD Variation: 3 sigma<=15nm
Overlay Accuracy: |mean|+3 sigma<=40nm
Exposure Method: Block exposure
Max. No. of Block Patterns: 70
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