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E1380A/1380P
E-Beam Test Systems
Achieves Design Quality Verification of Advanced VLSI, and Reduces the Time to Design VLSI.
E1380A and E1380P allow high-speed and high-accuracy design quality verification, with high accuracy and high stability probing technologies for the advanced device design rules, and ease of operation using industry-standard GUI. Further, the E1380A and E1380P achieve compact and single-piece construction, direct docking that has little effect on operating conditions, and a short analyzing time.


By automatically controlling electron-beam alignment and gain adjustment at the time of waveform measurements, operation is improved.


Allows direct docking suitable for timing verification of advanced high-speed devices.


Various analyzing tools (device interface, CAD navigation software) have contributed to shortening of turn around time (TAT).


Semi-automated contacting, controlling and Die-to-Die movements have contributed to ease of operation and high reliability (E1380P).
  E1380A E1380P
Target Devices: Target Devices Wafer (up to 8 inches)
Up to diameter 300nm of Probe cards
Up to 512 pins
Probe Range: 30mm x 30mm (max) Up to 8 inches wafer face
Beam Diameter: 0.1micro-m
Measurement Band: 8.75GHz
Minimum Pulsed Beam Width: 40ps
Settable Time Resolution: 5ps
Noise level: 5mVrms
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