
The F7000 is an EB lithography tool with superior resolution performance meeting requirements for the 1Xnm technology node. The F7000 supports substrates of diverse materials, sizes, and shapes, including nano-imprint templates, as well as wafers, and is optimized for diverse applications such as advanced LSIs, photonics, MEMS, and other nano-processes. Also, users can select the configuration optimal for their needs, either stand-alone or in-line, enabling the F7000 to support a wide array of applications from R&D to volume production.
| Resolution | 1Xnm |
|---|---|
| Supported substrates | Wafer (300mm, 200mm, 6 to 3inch), Glass substrate (6025) |
| Lithography method | CP, VSB |
* Contact below for more information
E-mail: info_nano@ml.advantest.com
Example of R&D use
(Stand-alone)
Example of production use
(In-line)

The F5113 is an electron-beam lithography system supporting 200mm and 3-inch through to 6-inch substrates, making it an optimal tool for processing advanced LSIs, compound semiconductor wafers, magnetic heads, smart power devices, photonics devices, MEMS, and other devices requiring ultrafine-pitch fabrication.
The F5113's character projection (CP) functionality offers high resolution, excellent pattern fidelity, and high throughput. High-speed pattern exposure with CP enables a broad range of applications, including materials R&D and evaluation.
Advantest's proprietary self-cleaning technology massively improves the stability of the electron beam used by the F5113, contributing to higher utilization ratios and lower customer running costs across the spectrum of applications.
| Supported Substrates | 200mm, 3-inch to 6-inch |
|---|---|
| Beam Acceleration Voltage | 50kV |
| Lithography Methods | CP, VSB |
| Reduction Ratio of CP Projection | 60x |
| Supported Nodes | 90nm and below (Smallest node supported varies by application. Inquire for details.) |



| Supported Wafer Size | 300mm |
|---|---|
| EB Acceleration Voltage | 50kV |
| Lithography Methods | CP, VSB |
| Reduction Ratio of CP Projection | 60x |
| Supported Nodes | 65nm |